12 results
New Materials-Theory-Based Model for Output Characteristics of AlGaN/GaN Heterostructure Field Effect Transistors
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue S1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, pp. 640-646
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- 2000
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Thermal Modeling of III-nitride Heterostructure Field Effect Transistors
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- Journal:
- MRS Online Proceedings Library Archive / Volume 622 / 2000
- Published online by Cambridge University Press:
- 15 March 2011, T6.26.1
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- 2000
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Monte Carlo Simulation of Hall Effect in n-Type GaN
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue S1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, pp. 570-575
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- 1999
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Symmetry of Electrons and Holes in Lightly Photo-Excited InGaN LEDs
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue S1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, pp. 793-798
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- 1999
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New Materials-Theory-Based Model for Output Characteristics of AlGaN/GaN Heterostructure Field Effect Transistors
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- Journal:
- MRS Online Proceedings Library Archive / Volume 595 / 1999
- Published online by Cambridge University Press:
- 03 September 2012, F99W11.15
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- 1999
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Extrinsic Performance Limitations of AlGaN/GaN Heterostructure Field Effect Transistors
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue S1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, pp. 678-683
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- 1999
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Symmetry of Electrons and Holes in Lightly Photo-Excited InGaN LEDs
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- Journal:
- MRS Online Proceedings Library Archive / Volume 537 / 1998
- Published online by Cambridge University Press:
- 15 February 2011, G7.4
- Print publication:
- 1998
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Extrinsic Performance Limitations of AlGaN/GaN Heterostructure Field Effect Transistors
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- Journal:
- MRS Online Proceedings Library Archive / Volume 537 / 1998
- Published online by Cambridge University Press:
- 15 February 2011, G6.35
- Print publication:
- 1998
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Monte Carlo Simulation of Hall Effect in n-Type GaN
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- Journal:
- MRS Online Proceedings Library Archive / Volume 537 / 1998
- Published online by Cambridge University Press:
- 15 February 2011, G6.6
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- 1998
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Monte Carlo Calculation Of High- And Low-Field AlxGa1−xN Electron Transport Characteristics
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- Journal:
- MRS Online Proceedings Library Archive / Volume 482 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 815
- Print publication:
- 1997
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Dielectric Functions of Wurtzite and Zincblende Structure GaN
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- Journal:
- MRS Online Proceedings Library Archive / Volume 395 / 1995
- Published online by Cambridge University Press:
- 21 February 2011, 601
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- 1995
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Theoretical Study of Electron Initiated Impact Ionization Rate in Bulk GaN using a Wave Vector Dependent Numerical Transition Rate Formulation
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- MRS Online Proceedings Library Archive / Volume 395 / 1995
- Published online by Cambridge University Press:
- 21 February 2011, 733
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- 1995
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